Vishay Siliconix
DG2731/2732/2733
Document Number: 73484
S-51920Rev. A, 12-Sep-05
www.vishay.com
1
Low Voltage, 0.4
, Dual SPDT Analog Switch
DESCRIPTION
The DG2731/2732/2733 are low voltage, low on-resis-
tance, dual single-pole/double-throw (SPDT) mono-
lithic CMOS analog switches designed for high
performance switching of analog signals. Combining
low-power, high speed, low on-resistance, and small
package size, the DG2731/2732/2733 are ideal for
portable and battery power applications.
The DG2731/2732/2733 have an operation range from
1.6 V to 4.3 V single supply. The DG2731 and DG2732
have two separate control pins with reverse control
logic. The DG2733 has an EN pin to enable the device
when the logic is high.
The DG2731/2732/2733 are 1.6-V logic compatible,
allowing the easy interface with low voltage DSP or
MCU control logic and ideal for one cell Li-ion battery
direct power.
The switch conducts signals within power rails equally
well in both directions when on, and blocks up to the
power supply level when off. Break-before-make is
guaranteed.
The DG2731/2732/2733 are built on Vishay Siliconix's
sub micron CMOS low voltage process technology and
provides greater than 300 mA latch-up protection, as
tested per JESD78.
As a committed partner to the community and the envi-
ronment, Vishay Siliconix manufactures this product
with lead (Pb)-free device terminations. DG2731/2732/
2733 are offered in a DFN or MSOP package. The
DFN package has a nickel-palladium-gold device ter-
mination and is represented by the lead (Pb)-free "-E4"
suffix. The MSOP package uses 100% matte Tin
device termination and is represented by the lead (Pb)-
free "-E3" suffix. Both the matte Tin and nickel-palla-
dium-gold device terminations meet all JEDEC stan-
dards for reflow and MSL ratings.
FEATURES
·
Low Voltage Operation (1.65 V to 4.3 V)
·
Low On-Resistance - r
ON
: 0.3
@ 3.6 V
·
Fast Switching: T
ON
= 50 ns @ 4.3 V
·
T
OFF
= 14 ns @ 4.3 V
·
Latch-Up Current > 300 mA (JESD78)
BENEFITS
·
Reduced Power Consumption
·
High Accuracy
·
Reduce Board Space
·
TTL/1.6-V Logic Compatible
APPLICATIONS
·
Cellular Phones
·
Speaker Headset Switching
·
Audio and Video Signal Routing
·
PCMCIA Cards
·
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN
CONFIGURATION
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 73484
S-51920Rev. A, 12-Sep-05
Vishay Siliconix
DG2731/2732/2733
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/C above 70°C
d. Derate 14.9 mW/C above 70°C
e. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
TRUTH TABLE
Logic
EN (DG2733 only)
NC1, 2
NO1, 2
0
1
ON
OFF
1
1
OFF
ON
0
0
OFF
OFF
1
0
OFF
OFF
ORDERING INFORMATION
Temp Range
Package
Part Number
40 to 85°C
MSOP10
DG2731DQT1E3
DG2732DQT1E3
DG2733DQT1E3
DFN10
DG2731DNT1E4
DG2732DNT1E4
DG2733DNT1E4
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol
Limit
Unit
Reference to GND
V+
0.3 to 5.0
V
IN, COM, NC, NO
a
0.3 to (V
+
+ 0.3)
Current (Any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC, or COM)
±250
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
±500
Storage Temperature (D Suffix)
65 to 150
°C
Package Solder Reflow Conditions
d
10PIN MSOP
10PIN DFN
Power Dissipation (Packages)
b
MSOP10
c
320
mW
DFN10
d
1191
SPECIFICATIONS (V+ = 1.8 V)
Parameter Symbol
Test Condition
Otherwise Unless Specified
V+ = 1.8 V, V
IN
= 0.4 or 1.4 V
e
Temp
a
Limits
40 to 85°C
Unit
Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 0.9 V, I
NO
, I
NC
= 100 mA
Room
0.7
1.0
Full
1.2
Digital Control
Input High Voltage
V
INH
Full
1.4
V
Input Low Voltage
V
INL
Full
0.4
Input Capacitance
C
in
Full
4
pF
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
µA
Document Number: 73484
S-51920Rev. A, 12-Sep-05
www.vishay.com
3
Vishay Siliconix
DG2731/2732/2733
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Condition
Otherwise Unless Specified
V+ = 3 V, ±10 %, V
IN
= 0.5 or 1.4 V
e
Temp
a
Limits
40 to 85°C
Unit
Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 0.5 V, I
NO
, I
NC
= 100 mA
Room
0.35
0.45
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 100 mA
0.3
Full
0.6
r
ON
Match
d
r
ON
V+ = 2.7 V, V
COM
= 0.5 to 1.5 V,
I
NO
, I
NC
= 100 mA
Room
0.03
0.06
Switch Off Leakage Current
I
NO(off)
,
I
NC(offF)
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V / 4.0 V,
V
COM
= 3.0 V / 0.3 V
Room
Full
1
10
1
10
nA
I
COM(off)
Room
Full
1
10
1
10
Channel-On Leakage
Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 3.0 V / 0.3 V
Room
Full
1
10
1
10
Digital Control
Input High Voltage
V
INH
Full
1.4
V
Input Low Voltage
V
INL
Full
0.5
Input Capacitance
C
in
Full
5
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
µA
Dynamic Characteristics
Turn-On Time
t
ON
V+ = 3.6 V
V
NO
or V
NC
= 1.5 V, R
L
= 50
, C
L
= 35 pF
Room
Full
85
110
140
ns
Turn-Off Time
t
OFF
Room
Full
17
30
35
Break-Before-Make Time
t
BBM
Full
10
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room
9
pC
Off-Isolation
d
O
IRR
R
L
= 50
, C
L
= 5 pF, f = 100 kHz
Room
75
dB
Crosstalk
d
X
TALK
Room
75
N
O
, N
C
Off Capacitance
d
C
NO(off)
V
IN
= 0 or V+, f = 1 MHz
Room
104
pF
C
NC(off)
Room
104
Channel On Capacitance
d
C
NO(on)
Room
230
C
NC(on)
Room
230
Power Supply
Power Supply Range
V+
2.7
3.3
V
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
µA
Turn-On Time
DG2733 (EN)
t
ON(EN)
V+ = 3.6 V
V
NO
or V
NC
= 1.5 V, R
L
= 50
, C
L
= 35 pF
Room
Full
79
105
135
ns
Turn-Off Time
DG2733 (EN)
t
OFF(EN)
Room
Full
17
29
35
www.vishay.com
4
Document Number: 73484
S-51920Rev. A, 12-Sep-05
Vishay Siliconix
DG2731/2732/2733
Notes
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 4.3 V)
Parameter Symbol
Test Condition
Otherwise Unless Specified
V+ = 4.3 V, V
IN
= 0.5 or 1.6 V
e
Temp
a
Limits
40 to 85°C
Unit
Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 4.3 V, V
COM
= 0.9 V, I
NO
, I
NC
= 100 mA
Room
0.29
0.4
V+ = 4.3 V, V
COM
= 2.5 V, I
NO
, I
NC
= 100 mA
0.21
Full
0.55
r
ON
Match
d
r
ON
V+ = 4.3 V, V
COM
= 0. 9 to 2.5 V+,
I
NO
, I
NC
= 100 mA
Room
0.03
0.06
Switch Off Leakage
Current
d
I
NO(off)
,
I
NC(off)
V+ = 4.3 V, V
NO
, V
NC
= 0.3 V / 4.0 V,
V
COM
= 4.0 V / 0.3 V
Full
20
20
nA
I
COM(off)
Full
20
20
Channel-On Leakage
Current
d
I
COM(on)
V+ = 4.3 V, V
NO
, V
NC
= V
COM
= 3.0 V / 4.0 V
Full
20
20
Digital Control
Input High Voltage
V
IN
Full
1.6
V
Input Low Voltage
V
INL
Full
0.5
Input Capacitance
C
in
Full
4
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
µA
Dynamic Characteristics
Break-Before-Make Time
t
BBM
V
NO
or V
NC
= 1.5 V, R
L
= 50
, C
L
= 35 pF
Full
5
ns
Power Supply
Power Supply Range
V+
4.3
V
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
µA
Document Number: 73484
S-51920Rev. A, 12-Sep-05
www.vishay.com
5
Vishay Siliconix
DG2731/2732/2733
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
r
ON
vs. V
COM
and Supply Voltage
r
ON
vs. Analog Voltage and Temperature
Supply Current vs. Input Switching Frequency
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
COM
Analog Voltage (V)
On-Resistance (
r
ON
)
T
C
= 25
°
C
I
S
= 100 mA
V+ = 1.8 V
V+ = 4.3 V
V+ = 2.7 V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
COM
Analog Voltage (V)
On-Resistance (
r
ON
)
I
S
= 100 mA
V+ = 4.3 V
85
°
C
25
°
C
40
°
C
10
10 K
100 K
10 M
100
1 K
1 M
100 mA
1.0 mA
10 nA
I+ Supply Current (A)
V+ = 4.3 V
100 nA
Input Switching Frequency (Hz)
10 mA
r
ON
vs. Analog Voltage and Temperature
Supply Current vs. Temperature
Supply Current vs. V
IN
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
COM
Analog Voltage (V)
On-Resistance (
r
ON
)
85
°
C
I
S
= 100 mA
V+ = 2.7 V
25
°
C
40
°
C
40
10
20
50
80
Temperature (
°
C)
I+ Supply Current (nA)
1
V+ = 4.3 V
V
IN
= 0 V
10
100
1000
10000
V
IN
10.0E3
100.0E6
10.0E9
100.0E12
1.0E6
V+ = 2.7 V
V+ =
3.6 V
V+ = 4.3 V
0
1
2
3
4
5
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