August 2006
Rev 3
1/13
13
STD16NE10L
N-channel 100V - 0.07
- 16A - DPAK
STripFETTM Power MOSFET
General features
Avalanche rugged technology
Low gate charge
High current capability
175°C operating temperature
Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
Internal schematic diagram
Type
V
DSSS
R
DS(on)
I
D
STD16NE10L
100V
<0.10
16A
1
3
DPAK
www.st.com
Order codes
Part number
Marking
Package
Packaging
STD16NE10LT4
D16NE10L
DPAK
Tape & reel
Contents
STD16NE10L
2/13
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD16NE10L
Electrical ratings
3/13
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate voltage (R
GS
= 20K
)
100
V
V
GS
Gate-source voltage
± 20
V
I
D
Drain current (continuous) at T
C
= 25°C
16
A
I
D
Drain current (continuous) at T
C
=100°C
11
A
I
DM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
64
A
P
TOT
Total dissipation at T
C
= 25°C
90
W
Derating factor
0.6
W/°C
E
AS
(2)
2.
Starting T
J
= 25
o
C, I
D
= 8A, V
DD
= 30V
Single pulse avalanche energy
75
mJ
dv/dt
(3)
3.
I
SD
16A, di/dt
300 A/µs, V
DS
V
(BR)DSS
, T
J
T
JMAX
Peak diode recovery voltage slope
7
V/ns
T
stg
Storage temperature
-55 to 175
°C
T
J
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case Max
1.67
°C/W
R
thJA
Thermal resistance junction-ambient Max
100
°C/W
T
l
Maximum lead temperature for soldering
purpose
275
°C
Electrical characteristics
STD16NE10L
4/13
2 Electrical
characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 3.
On
(1)
/off states
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
µA, V
GS
= 0
100
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
1
1.7
2.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 8A
V
GS
= 5V, I
D
= 8A
0.07
0.085
0.085
0.01
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DSv
> I
D(on)
x R
DS(on)max
I
D
= 8A
5
9
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1750
165
45
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 16A
V
GS
= 5V
24
5.5
11
32
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 8A,
R
G
= 4.7
, V
GS
= 4.5V
Figure 12 on page 8
40
80
45
12
ns
ns
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 80 V, I
D
= 16 A
R
G
= 4.7
, V
GS
= 4.5 V
(Inductive Load, Figure 5)
12
17
35
ns
ns
ns
STD16NE10L
Electrical characteristics
5/13
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
I
SD
Source-drain current
16
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
64
A
V
SD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 16A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 16A,
di/dt = 100A/µs,
V
DD
= 40V, T
J
= 150°C
Figure 14 on page 8
100
300
6
ns
µC
A
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