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Datasheet: 8050 (Stanson Technology)

Npn Transistor

 

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Stanson Technology
NPN TRANSISTOR 8050

1.5A

Power Dissipation
Pcm : 1.0W
Collector Current
Icm : 1.5A
Collector-Base Voltage
Vcbo: 45V


MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS
SYMBOL MIN TYP MAX
UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
25
V
Ic=0.1mA
Collector-Base Breakdown Voltage BVcbo
45
V
Ic=100
u
A
Emitter-Base Breakdown Voltage
BVebo
5
V
Ie=100A
Collector-Base Leakage
Icbo
0.1
uA Vcb=40V
Collector-Emitter Leakage
Iceo
0.1
uA
Vce=20V
Emitter-Base Leakage
Iebo
0.1
uA
Veb=5V
Collector-Emitter Saturation Voltage
Vce(sat
0.6
V
Ic=1500mA, Ib=50mA
Base-Emiiter Saturation Voltage
Vbe(sat)
1.2 V Ic=1500mA,
Ib=50mA
DC Current Gain
Hfe1
Hfe2
85
50
300
Vce=1V,Ic=50mA
Vce=1V,Ic=500mA
Collector Current
Ic
1.5 A
Peak Collector Current
Icp
8
A(Pulse)
Current Gain Bandwidth
f
T
150
MHz
Vcb=6V,
Ic=20mA
Output Capacitance
Cob
32 pF
Vcb=20V,Ie=0,f=1MHz
Power Dissipation
Pc
1.0 W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150

Hfe1 Classification
Rank B
C
D
Range 85-160
120-200
160-300





STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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