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Datasheet: BAT14-094 (Siemens Semiconductor Group)

HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)

 

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Siemens Semiconductor Group

Document Outline

T
T1
HiRel
Silicon Schottky Diode
BAT 14
Semiconductor Group
1
Draft A03 1998-04-01
Features
HiRel
Discrete and Microwave Semiconductor
Medium barrier diodes for detector and mixer
applications
Hermetically sealed microwave package
qualified
ESA/SCC Detail Spec. No.: 5106/014
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
(ql) Quality Level:
P: Professional Quality,
Ordering Code: Q62702D1346
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality,
Ordering Code: Q62702D1345
(see
Chapter Order Instructions
for ordering example)
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 14-013 (ql)
-
see below
T
BAT 14-014 (ql)
-
see below
see BAT14-013
T1
BAT 14-033 (ql)
BAT 14-034 (ql)
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-043 (ql)
BAT 14-044 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-063 (ql)
BAT 14-064 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-073 (ql)
BAT 14-074 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-093 (ql)
BAT 14-094 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-103 (ql)
BAT 14-104 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-113 (ql)
BAT 14-114 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14-123 (ql)
BAT 14-124 (ql)
-
-
see below
see below
see BAT14-013
see BAT14-013
T
T1
BAT 14
Semiconductor Group
2
Draft A03 1998-04-01
1)
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
3
V
Forward current
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
I
F
100
100
50
50
50
mA
Power dissipation
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
P
tot
100
100
50
50
50
mW
Operating temperature range
T
op
-
55 to + 150
C
Storage temperature range
T
stg
-
65 to + 175
C
Soldering temperature
T
sol
+ 220
C
Burn-out energy
1)
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
E
B
5.0
5.0
2.0
2.0
1.0
Erg
BAT 14
Semiconductor Group
3
Draft A03 1998-04-01
Electrical Characteristics
2)
Table 2
DC Characteristics
at
T
A
= 25
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Breakdown voltage
I
R
= 10
m
A
V
(BR)
3
-
-
V
Reverse current
V
R
= 2 V
I
R
-
-
1
m
A
Forward voltage 1
I
F1
= 0.01 mA
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
V
F1
-
-
-
-
-
-
-
-
-
-
0.31
0.32
0.33
0.35
0.36
V
Forward voltage 2
I
F2
= 1 mA
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
V
F2
-
-
-
-
-
0.42
0.44
0.45
0.46
0.48
0.44
0.45
0.46
0.48
0.50
V
Series resistance
2)
I
F1
= 10 mA,
I
F2
= 50 mA
BAT14-013, -014
BAT14-033, -034
BAT14-043, -044
BAT14-063, -064
BAT14-073, -074
BAT14-093, -094
BAT14-103, -104
BAT14-113, -114
BAT14-123, -124
R
F
-
-
-
-
-
-
-
-
-
3.0
4.0
3.5
4.5
4.5
5.5
6.0
7.0
8.0
3.5
4.5
4.0
5.0
5.5
6.5
7.0
8.0
9.0
W
R
F
D
V
F
40
10
3
-------------------------
W
=
BAT 14
Semiconductor Group
4
Draft A03 1998-04-01
Table 3
AC Characteristics
at
T
A
= 25
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
V
R
= 0 V,
f
= 1 MHz
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
C
T
-
-
-
-
-
0.35
0.30
0.27
0.23
0.20
0.60
0.35
0.30
0.25
0.22
pF
Noise figure
I.F. = 30 MHz
LO power = 0 dBm
LO = 9.375 GHz
BAT14-013, -014
BAT14-033, -034
BAT14-043, -044
BAT14-063, -064
BAT14-073, -074
BAT14-093, -094
BAT14-103, -104
BAT14-113, -114
BAT14-123, -124
NF
-
-
-
-
-
-
-
-
-
5.3
6.3
5.3
6.3
5.3
6.3
5.7
7.2
8.0
5.5
6.5
5.5
6.5
5.5
6.5
6.0
7.5
9.0
dB
BAT 14
Semiconductor Group
5
Draft A03 1998-04-01
Order Instructions
Full type variant including type variant and quality level must be specified by the orderer.
For
HiRel
Discrete and Microwave Semiconductors the ordering code specifies device
family and quality level only.
Ordering Form:
Ordering Code: Q
BAT14- (x) (ql)
(x): Type Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702D1345
BAT14-014 ES
For BAT14-014 in T1 Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
BAT 14
Semiconductor Group
6
Draft A03 1998-04-01
Figure 1
T Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.4
BAT 14
Semiconductor Group
7
Draft A03 1998-04-01
Figure 2
T1 Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.40
D
0.10
0.50
E
-
0.30
F
0.06
0.10
G
5.50
-
H
0.40
0.60
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